Abstract
The 1/ f noise in MOS transistors has been investigated and is shown to correlate with charge transfer inefficiency experiments on surface-channel CCDs. Both independent phenomena can be quantitatively explained by the same interface state model. The oxide trap density turns out to vary by more than a factor 10. The 1/ f noise is compared with McWhorter's number fluctuation model and with the mobility fluctuation model. The oxide trap density is calculated from the charge transfer inefficiency in surface CCDs. Both the quantitative agreement between oxide trap density and 1/ f noise and the observed dependence of 1/ f noise on gate voltage here give strong arguments in favour of the McWhorter model. The investigated MOS transistors fall into a category that cannot be explained by the present mobility fluctuation model.
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