Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region

Abstract

The characteristic potential method(CPM), which has been successfully applied to calculate 1/f noise and thermal noise of multi-terminal homogeneous semiconductor resistors, is extended to calculate 1/f noise in inhomogeneous devices such as MOSFETs. The drain 1/f noise current of MOSFETs in the linear region is calculated using the CPM together with the well-known existing 1/f noise sources based on either Hooge's empirical model or McWhorter's model, and the calculated results are compared with the experimental results. It is shown that the difference of the 1/f noise behaviour between n-MOSFETs and p-MOSFETs in the linear region can be attributed to either the difference in their effective field dependence between the local electron mobility and the local hole mobility near the Si-SiO2 interface in the inversion layer or the difference in degree of Nt(oxide trap density)dependence between the effective electron mobility and the effective hole mobility.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.