Flicker noise in MOS transistors operated at room and liquid helium temperatures

Abstract

Flicker noise in MOS transistors operated in the linear and non linear regions is studied at room and liquid helium temperatures. A theoretical analysis of the drain current noise is conducted within the mobility and carrier number fluctuation models. A close correlation between the drain current noise and the transconductance squared dependencies with gate and drain voltages is found experimentally both at room and liquid helium temperatures. It is concluded that the carrier number fluctuation model is suitable for the interpretation of our data at room and liquid helium temperatures in ohmic and non ohmic regimes. Peculiarities of the drain current noise in the kink effect region are also discussed.