Correlation between End-Of-range defect densities and electrical properties of p+/n junctions formed by B implantation into Ge-preamorphised Si substrates

Abstract

In this paper, we study the relation which exists between the depth position of a population of end of range (EOR) defects and the electrical properties of preamorphised diodes. The influence of the EOR defects, studied by TEM, is studied by the exploitation of capacitance-voltage and current-voltage measurements. These measurements realized as a function of temperature, give us the conduction process which dominates. Our results show that very high quality p+/n juntions can be formed by low energy B implantation into Ge preamorphised Si-substrates. Instead of focussing on damage removal, this can be obtained through the judicious positioning of EOR defects relative to the space charge region of the junction.