Modeling the nucleation and evolution of end of range dislocation loops in silicon

I Avci,K.S Jones,E Kuryliw,M.E Law

doi:10.1109/iedm.2001.979643

Modeling the nucleation and evolution of end of range dislocation loops in silicon

I Avci, K.S Jones + Show 2 more

https://doi.org/10.1109/iedm.2001.979643

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Publication Date: Dec 2, 2001

Citations: 2

Affiliation: University of Florida

#End Of Range Defect #End Of Range Dislocation Loops + Show 8 more

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Abstract

Amorphization commonly occurs during implantation forming end of range (EOR) defects at the amorphous/crystal line (a/c) interface upon annealing. It is imperative to know how these defects form in order to do predictive simulations of dopants. In this study, we developed a model to predict the EOR defect nucleation and evolution. It is assumed that all the loops come from unfaulted {311}'s. The model is verified with the new experimental results obtained by studying the formation of EOR defects by varying the implant energy from 40 keV to 80 keV at a dose of 2/spl times/10/sup 15/ cm/sup -2/.

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