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PDF Availablehttps://doi.org/10.1109/led.2019.2956966
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Cite Journal: IEEE Electron Device Letters |  Publication Date: Jan 1, 2020 |
Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795
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