Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200 V 4H-SiC Inversion-channel MOSFETs

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In this paper, we report successful fabrication of 1200 V 4H-SiC planar-gate inversion-channel power MOSFETs with 27 nm gate oxide thickness in a 6 inch commercial foundry. The static electrical characteristics, switching performance and short-circuit failure times for the 27 nm devices are compared with those of conventional 55 nm gate oxide devices. The specific on-state resistance of the 27 nm gate oxide devices at a gate voltage of 15 V was found to be 1.5x lower than the conventional 55 nm gate oxide devices at a gate bias of 20 V. The total switching energy loss (E tot ) for the 27 nm device with V gs of 15 V and V gs of 10 is approximately equal and 1.4x larger than the 55 nm case with V gs of 20 V. The short-circuit failure time (t sc ) for the 27 nm device is 1.4× better than 55 nm device at V gs of 10 V but 1.4× worse for V gs of 15 V.