Abstract

This paper presents results from the production of copper oxide layers on a Cu sheet substrate using diode and Yb:YAG disc lasers operating in the wavelength ranges of 808–940 nm and 1030 nm. The parameters of these layers were compared with the layer obtained in the thermal process of copper oxidation at 300 °C in an infrared (IR) furnace in a natural atmosphere. Investigations into the layers mentioned above, concerning their topography, chemical composition and roughness, were made using scanning electron microscopy (SEM) and atomic force microscopy (AFM). A hot-point probe was used to determine and check the type of conductivity of the copper oxide layers formed. The optical band gap energy was estimated by applying the Kubelka–Munk method based on spectrophotometric data. Cross-sections and the element distribution maps were made using transmission electron microscopy (TEM). The phase analysis was investigated by the X-ray diffraction method (XRD). In sum, controlled laser oxidations of copper sheets allow for the formation of a mixture of Cu2O and CuO phases. The diode laser allows the production of a layer of copper oxides with a phase composition comparable to the oxides produced by the thermal oxidation method, while the distribution of high phase uniformity in the cross-section of the layer enables the process using a Yb:YAG disc laser.

Highlights

  • Due to favourable properties like low cost and abundance, metal oxide semiconductors have attracted considerable attention in photovoltaics

  • Representative samples made with the same processing time using both the diode and disk lasers were selected for a detailed analysis using transmission electron microscopy (TEM) and scanning electron microscopy

  • Rofin-Sinar GmbH (Hamburg, Germany) diode laser and a TruDisk Trumpf 3302 Yb:YAG (Ditzingen, Germany) disc laser operating in different radiation ranges and the comparison of their basic material parameters with copper oxides produced in the heating process in an IR lamp furnace

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Summary

Introduction

Due to favourable properties like low cost and abundance, metal oxide semiconductors have attracted considerable attention in photovoltaics. An example of such a compound is copper oxide, which primarily exists in either of the two well-established stoichiometric forms, Cu2 O and CuO, corresponding to cubic and monoclinic crystal structures, respectively [1]. The p-type semiconductor oxides, Cu2 O and CuO, were formed by thermal oxidation of copper sheets in the 200−1000 ◦ C temperature range. Particular attention is paid to demonstrate the differences in the use of different lasers at the same stage of the oxidation process to obtain stable and repeatable working conditions for heterojunction solar cells. The results of the work confirm the potential use of the laser method to fabricate layers of Cu oxides quickly, with parameters comparable with the layers manufactured in the classic, more time-consuming and more costly annealing processes

Experimental Details
Lasers
Results and Discussion
Chosen
Diffraction
Linear
Summary
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