Abstract
Copper indium diselenide (CIS) and copper indium gallium diselenide (CIGS) are now well established as exceptionally efficient semiconductors with potential applications in the fields of solar cells, infrared radiation monitors and fibre optic infrared detectors. CIGS can be doped both p- and n-type and has a direct band gap which can be varied between 1.02 eV and 1.68 eV. Single-crystal CIS infrared detectors were produced on p-type substrates. The devices displayed photosensitivity significantly superior to that of silicon in the infrared at wavelengths up to 1.3 μm. Thin films were deposited by pulsed laser ablation of polycrystalline CIS targets using a XeCl excimer laser. The electrical and photo response of the thin film devices, while inferior to that from single crystals, indicated that laser ablated thin-film CIS sensors have potential for use as infrared detectors.
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