Abstract
The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (Ureco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (Ureco=21.9J/cm3, η=87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (Ureco=17.6J/cm3, η=82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant Ureco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which Ureco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.
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