Controlled growth of antimony-doped tin dioxide thin films by atomic layer epitaxy

Abstract

Antimony-doped tin dioxide thin films were deposited on glass substrates by atomic layer epitaxy using SnCl 4, SbCl 5 and H 2O as reactants. The growth experiments were carried out at 500°C. The effect of Sb doping on the growth rate, crystal texture and electrical and optical properties was studied. Spectrophotometry, secondary ion mass spectrometry, X-ray diffraction and electron spectroscopy for chemical analysis, as well as sheet resistance and Hall measurements were used to characterize the films. The films were highly uniform with only small thickness and sheet resistance variations. The films were polycrystalline with their crystallites having a preferred orientation, which depended on the Sb doping level and film thickness.