Abstract
This paper is devoted to the description of a new method for growing crystals from the vapour phase in a sealed ampoule, which allows an independant control of mass flow, supersaturation, and growth temperature. It has been developed after a systematic study of the HgI 2 (α) nucleation and crystal growth, and then concerns at first physical vapour transport with congruent sublimation. Nevertheless it can be applied to systems with dissociative sublimation, and more generally to chemical vapour deposition as outlined in the text.
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