ZnSe single crystal growth by the method of dissociative sublimation

Abstract

ZnSe single crystals of good quality have been grown from the vapour phase by dissociative sublimation in sealed ampoules. Under p min conditions, maximum transport rates have been measured. The grown crystals had convex growth faces. However, the majority of runs in this category yielded relatively poor quality boules. As the vapour approaches conditions for depositing nearly stoichiometric solid ZnSe, at decreasing growth rates, large strain-free single crystals without twinning and morphological instability were successfully grown. Additional critical parameters which contribute to this behaviour are growth temperature, temperature gradient and temperature difference between source and crystal.