Abstract
We investigated the growth process and dislocation generation of GaAs 1− x N x alloys grown on GaAs by solid-source molecular beam epitaxy (MBE). It was found that the GaAs 1− x N x alloys with a mirror-like surface can be grown by lowering the arsenic-to-gallium flux ratio compared to that in the growth of GaAs. The nitrogen composition in the GaAs 1− x N x alloys increased with decreasing substrate temperature and with increasing RF-power. As the nitrogen composition increased, the misfit dislocations were observed at the GaAs 1− x N x –GaAs heterointerface. It was clarified that the propagation of dislocations was suppressed in GaAs 1− x N x alloys by adding nitrogen.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.