Abstract
We investigated the growth process and dislocation generation of GaAs 1− x N x alloys grown on GaAs by solid-source molecular beam epitaxy (MBE). It was found that the GaAs 1− x N x alloys with a mirror-like surface can be grown by lowering the arsenic-to-gallium flux ratio compared to that in the growth of GaAs. The nitrogen composition in the GaAs 1− x N x alloys increased with decreasing substrate temperature and with increasing RF-power. As the nitrogen composition increased, the misfit dislocations were observed at the GaAs 1− x N x –GaAs heterointerface. It was clarified that the propagation of dislocations was suppressed in GaAs 1− x N x alloys by adding nitrogen.
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