Abstract
Carbon incorporation in InGaAs and GaAs is systematically studied in solid-source molecular beam epitaxy (MBE) as a function of carbon tetrabromide pressure, indium molar fraction, and substrate orientation. The maximum attainable free carrier concentration in GaAs and InGaAs lattice matched with InP was 2×1020 cm−3. The etching effect of CBr4 on growth rate reduction, surface morphology, and growth mechanism is clarified. A comparative study of carbon incorporation as function of substrate orientation and polarity was undertaken by the growth of GaAs and In0.53Ga0.47As on (n11)A and B (n=2, 3, 5) and (100) oriented substrates. Free carrier concentration and mobility measurements showed no carbon autocompensation in GaAs but strong amphoteric behavior for In0.53Ga0.47As grown on arsenic terminated planes. Measurement of hole concentration as function of indium molar fraction in InxGa1−xAs shows that carbon tetrabromide can be used as an effective acceptor doping percursor for indium molar fraction x less than 80% in solid-source MBE.
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