Abstract
The experimental data related to the electric field gradient at transition impurities either in hexagonal metals, or in cubic metals where the isotropy is perturbed by a next impurity, can be explained neither by the lattice contribution nor by the electronic contribution from the conduction band. A model is proposed here to investigate the electronic contribution arising from virtual bound 3 d states on the impurity, by studying the local crystal field influence in a Friedel-Anderson model. It appears that at the 0°K limit, the localized electronic contribution to the EFG can be linearly related to the density n d(ϵ F) of 3 d states at the Fermi level. As a first approximation, this law is valid even at temperature different from 0°K so establishing a linear correlation between the EFG, the impurity resistivity and the amplitude of the charge perturbation around the impurity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
