Abstract
Fixed oxide charges in HfO2 thin films have been characterized by photoreflectance spectroscopy (PRS). HfO2 films were deposited on Si by pulsed laser deposition (PLD) in N2, O2 and a mixture of these gases. PRS spectral intensity decreases with increasing positive charge in a film. HfO2 deposited in N2 has larger positive charges than that deposited in O2 because of smaller PRS spectral intensity of the former. It is confirmed by ArF laser irradiation that this positive charge is caused by oxygen defects in HfO2. Moreover, the effects of rapid thermal annealing (RTA) on HfO2/Si have been evaluated by PRS. The PRS spectral intensity becomes maximum by RTA at 600°C in N2 or O2. It is suggested that the suitable temperature for the RTA of the HfO2/Si structure prepared by PLD is 600°C.
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