Abstract
This work analyzes the effect of post-deposition rapid thermal annealing (RTA) on the crystal quality and the piezoelectric response of sputtered polycrystalline aluminium nitride (AlN) thin films. AlN films with mixed crystal texture were not significantly affected by RTA processing. However, in films exhibiting clear c-axis preferred orientation, the annealing produced a crystallization process, characterized by an increase in the grain size of the original crystallites, the growth of new small grains, and the reduction of defects. The improvement in the crystal quality was more evident in highly textured c-axis oriented films. However, the enhanced crystal quality of the films due to RTA was not accompanied by a significant improvement in the piezoelectric response. This is attributed to the presence of grains with opposite polarities that could not be rearranged through the RTA treatment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
