Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film

Abstract

Hybrid organic–inorganic perovskites have been widely studied in high-performance optoelectronic devices. Long-term stability is a key limitation to date in restricting their further development and commercial application. In general, interface properties between a semiconductor and an electrode highly affect device performance and stability. Herein, contact characteristics between the perovskite and electrode varying with illumination status have been first investigated. The results suggest that device's contact resistance (RC), obtained from a transfer length method, decreases as the incident light intensity increases. The RC under a higher irradiation intensity (1.26 mW/cm2) is about one-tenth of that at a lower density (0.08 mW/cm2). Simulation has been performed and shows a similar trend with experimental results. The interface physical model has been discussed based on an energy band theory. The band bending and barrier modulation at the interface under light illumination are originated from the surface states and the localized charges. This work explains the interface in determining device's fundamental properties, including stability, RC variation, and charge carrier transport process. It is significant in understanding the device working mechanism and providing a potential way for perovskite optoelectronic devices with enhanced stability and performance.