Abstract
A constant voltage scaling scheme is examined for the enhancement of frequency and power performance of FETs. For low electric fields, this scheme is self-consistent within Shockley's formulation and improves the overall frequency and power performance figure of merit by a factor of κ 6 with a κ times reduction in the device area. For high electric fields, the improvement is reduced to κ 3 times due to the velocity saturation effect. Reduced breakdown voltage further limit the improvement.
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