Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

Abstract

Quantum states in InP/GaAs type-II ultrathin quantum wells (QWs) are investigated through temperature dependent capacitance–voltage (C–V) measurements. We observe a well-defined peak in the apparent carrier density (ACD) profile for the ultrathin QWs at low temperatures in the vicinity of QWs. ACD peak value is found to decrease with the reduction in QW thickness, indicating quantum confinement effect. Decrease in the ACD peak value and increase in its width with increasing temperature confirms that the observed peak in the ACD profiles is related to the two dimensional electrons occupying the quantum states formed in the ultrathin QWs. We do not observe appreciable peak shift in ACD profiles with temperature, which is attributed to the less temperature dependence of the Debye length because of the high doping density used in the barrier region of InP/GaAs ultrathin QWs. We determine a strained value of 180 ± 30 meV for the conduction band discontinuity by simulating the C–V profile through the self-consistent solution of Schrodinger and Poisson equations for InP/GaAs ultrathin QW.