Abstract
The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of electron confinement in the conduction band of InP is provided by the capacitance voltage measurements.
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