Abstract
Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.
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