Ultrathin GaN/AlN quantum wells for deep UV emitters

Abstract

GaN/AlN ultrathin quantum wells (QWs) were grown by metalorganic vapor phase epitaxy using a self-limiting process of GaN thickness to the monolayer (ML) level. 1 ML GaN/AlN QWs emit at 225 nm. The photoluminescence (PL) intensity ratio between low and room temperatures is improved from 0.1% for a conventional AlGaN-based QW emitting at 235 nm to 5% the 1 ML GaN QW. Further improvement to 50% was achieved by an ultrathin GaN QW on r-plane, showing promise of ultrathin GaN QWs as efficient UV emitters.