Abstract
The conduction band structure of [110]/(001) uniaxially strained Si changes owing to the coupling effect between Δ1 and Δ2' conduction subbands. Consequently, its corresponding physical property will be changed. Because of the lack of reported papers about this change, we establish the analytic E–k relationship, considering the coupling effects between conduction subbands, near the extreme point of the energy valley in [110]/(001) uniaxially strained Si within the framework of the k·p perturbation theory. Then, the parameters of the conduction band of [110]/(001) uniaxially strained Si, including band degeneracy, energy level, splitting energy, and effective mass, as a function of the magnitude of stress were obtained. Our analytic models and quantized results will provide significant theoretical references for the design of a uniaxially strained Si metal oxide semiconductor field effect transistor (MOSFET).
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