Abstract
A detailed study of low-temperature magnetoconductance in between quantized Hall plateaux is presented. The data are obtained for disordered two-terminal submicron wires defined in GaAs/AlGaAs heterostructures modulation-doped by Si. Slow time evolution of conductance G is observed on the high-field side of the quantized plateaux – for filling factors ν<3 and ν<2. This surprising noise is attributed to glassy dynamics of localized electrons in the wire centre, and to the corresponding time dependence of the impurity-assisted tunnelling probability between the current carrying regions.
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