Abstract
The conductance of inelastic electron tunnelling (IET) junctions, typically Al/aluminium oxide/dopant/Pb (about 3000 Å thick), was measured during infusion doping. The measurements, necessarily rapid and accurate, were made by employing a digital multimeter and microcomputer. These measurements indicate an increase in the insulating barrier thickness during doping, which has been confirmed by corresponding changes in the junction capacitance. An experimental technique was also developed, allowing contamination-free infusion-doped IET spectra to be obtained routinely. A model is proposed which to a first approximation predicts the behaviour of junction conductance as a function of time during doping. Thus the dynamics of the infusion doping process have been clarified.
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