Abstract

Current–voltage characteristic curves of NFinFET are presented and fitted with modified current–voltage (I-V) formulas, where the modified term in the triode region is demonstrated to be indispensable. In the as-known I-V formula, important parameters need to be determined to make both the measured data and the fitting data as close as possible. These parameters include kN (associated with the sizes of the transistor and mobility), λ (associated with early voltage), and Vth (the threshold voltage). The differences between the measured data and the fitting data vary with the applied source–drain bias, proving that the mobility of the carriers is not consistently constant. On the other hand, a modified formula, called the kink effect factor, is negatively or positively added, simulating solitary heat waves or lattice vibration, which disturb the propagation of carriers and thus influence the source–drain current (IDS). The new statistical standard deviations (δ) are then found to be effectively suppressed as the kink effect is taken into account.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call