Abstract
A feasible conclusive algorithm is proposed, using minimum statistical variant to approach to current-voltage characteristics curves of NFinFET transistors, in which leakage currents between Source and Drain, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> 's, are effectively suppressed as the gate bias is set zero. Surely, this popular electronic performance draws intensive attentions, and finding a somewhat convincing method to model-fit measured curve-like data is tremendously intriguing. In this paper, the threshold voltages, mobility of carriers, and Early Voltage are not necessarily set to be fixed. And a technically engineering algorithm, using the conventional modified formula accompanied with a convergent data-comparing program, successfully addresses the current-voltage characteristic curves.
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