Abstract
Abstract A new concentration profile is proposed to reduce the surface electric field without increasing the peak bulk electric field in p+-n-n+ structures. The field configuration in the structure is analysed using a computer which shows that by suitably adjusting the impurity concentration near the edges, the surface electric field can be made equal to the bulk field even in the presence of the surface charges. This results in a near ideal reverse breakdown voltage. Thus, a simple diamond scribing and breaking or chemical etching method can be used to process the diffused wafers.
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