Computer design and analysis of relaxation oscillator circuits applying unijunction transistors

Abstract

Performance data for unijunction transistor devices and their applications as oscillator circuits operate at normal and elevated temperature levels (up to 140°C) as well as in nuclear radiation environments (up to 1000 Mrad) are presented either experimentally or theoretically. Different computer programs are suggested to solve the general equations for the relaxation oscillators' design and analysis and to introduce the operating conditions, temperature and nuclear radiation effects on their performance. It was found that the experimental and calculated data are in close agreement.