Compressive Stress Increase With Repeated Thermal Cycling in Tantalum(Oxygen) Thin Films

Abstract

ABSTRACTStresses which build up in thin films, such as tantalum, during thermal processing, can cause major reliability problems in x-ray optics and electronic applications. We have demonstrated that 50 nm to 200 nm thick sputtered beta tantalum thin films undergo repeated compressive stress increases when thermally cycled from room temperature to 400°C (at 10°C/min) and back in a purified He ambient because of low levels of oxygen gettered by the tantalum. The oxygen contamination is a result of the poor quality of the quartz annealing chamber atmospheric seal. As-deposited stress in the sputter deposited tantalum films ranges from -1 to -4 GPa. The compressive stress build up was monitored in situ and was shown to increase -0.5 GPa on average after each thermal cycle for a final value of -6 to -7 GPa after seven cycles. After being cycled thermally seven times any perturbation of the film such as a four point probe resistivity measurement can cause the film to instantaneously crack in a serpentine pattern relieving the large compressive stress. Auger electron spectroscopy depth profiling analysis indicated that the as-deposited films contained one atomic percent oxygen which increased to eight to twelve percent after seven thermal cycles accompanied by an approximate doubling in resistivity. In conclusion, the increase in oxygen concentration in tantalum thin films which occurs upon thermal cycling leads to a repetitive increase in compressive stress which could be detrimental when the films are used in x-ray or electronic applications.