Front and back side Auger electron spectroscopy depth profile analysis to verify an interfacial reaction at the HfN∕SiO[sub 2] interface

Abstract

Sputter-induced artifacts can create the appearance of an interfacial reaction between Hf-based films and the underlying SiO2 in sputter depth profiles. A combination of front and back side Auger electron spectroscopy depth profile analysis is used to distinguish between a native interfacial reaction at the interface between HfN and SiO2 and a potential sputtering artifact. Experimental results show that a native reaction occurs; however, the extent of the reaction may be over-represented in the front side profile due to a sputter artifact component.