Abstract
We present a novel and comprehensive analysis method that considers both the plasma-dispersion effect and the strain-induced Pockels effect to faithfully describe the electro-optic effects taking place in a strained silicon waveguide under an applied voltage. The change in carrier distribution arising from the application of a voltage leads to a redistribution of the electrostatic field which deeply affects the strain-induced Pockels effect. By simulating the strain gradient distribution inside the waveguide together with the free carrier concentration in silicon, we were able to describe that the effective index change due to the Pockels effect in strained silicon waveguides and the applied voltage have a nonlinear relationship.
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