Abstract
Cu2AgBiI6 films were prepared by a one-step spin coating method, and flexible memristors with an Ag/PMMA/Cu2AgBiI6/ITO structure were constructed. The devices showed a bipolar resistive switching behavior with low switching voltage, which is beneficial for reducing energy consumption. Furthermore, this study found that the device exhibits an endurance of about 900 cycles, a higher ON/OFF ratio of over 103, a long retention time (∼104 s), and high stabilities against mechanical stress. Remarkably, the present flexible memristor displayed extraordinary flexibility and stability, with no significant change for the resistive switching behavior even at various bending angles or after undergoing 900 bending cycles. This study establishes that the lead-free halide perovskite Cu2AgBiI6 can be used for the resistive random-access memory of flexible electronics.
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