Abstract
The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response. The proposed configuration enhances the effective refractive index due to the strain-induced Pockels effect in more than two orders of magnitude with respect to the usual configuration.
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