Abstract
The room temperature structures and the temperature evolution of dielectric properties of Ba1 - xSrxTiO 3 (BSTO) thin films were studied in the range of x = 0–1. The epitaxial heterostructures were grown by in situ pulsed laser deposition on MgO (100) substrates using an La 0.5 Sr 0.5 CoO 3 (LSCO) bottom electrode layer. For all compositions, room-temperature x-ray diffraction measurements revealed a pseudocubic structure for BSTO, a cube-on-cube epitaxy and a small or negligible in-plane compressive strain in the main volume of the BSTO layer. With increasing x, a monotonic decrease of the room-temperature lattice parameters was observed, in qualitative agreement with that in ceramics. The temperature of maximum dielectric permittivity T m decreased with increasing x, in qualitative agreement with the phase diagram of BSTO ceramics. However, a systematic shift of T m to lower temperatures was found with respect to T m in bulk. The obtained results are discussed in terms of thin-film related effects on the phase diagrams of BSTO.
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