Abstract
Compositional and electrical characterization of Hg1−xCdxTe heterojunction devices has been performed by cross-sectional electron-beam induced conductivity (EBIC), Auger voltage contrast (AVC), and Auger electron spectroscopy (AES). Devices were fabricated from double layer LPE HgCdTe grown on CdTe and CdZnTe substrates. Cleaved diodes were wire bonded to a specimen mount and analyzed in a scanning Auger microscope at 123 K. This is the first reported Auger analysis of HgCdTe at cryogenic temperatures. EBIC analysis located the electrical junction while the contactless AVC also confirmed an electrical junction at the substrate interface. Subsequent AES compositional analysis located and determined interface widths of 1.2 μ and 1000 Å for the substrate and heterojunction interfaces, respectively. Although EBIC is a ‘‘bulk’’ phenomenon and AES and AVC are ‘‘surface’’ phenomena, results from concurrent experiments aid in relating device performance to structural composition.
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