Abstract
Diamond films prepared in an ASTeX plasma deposition system and the Heriot-Watt UHV compatible microwave deposition system have been characterized by a range of techniques including electron microscopy, electron diffraction, electron energy loss spectroscopy, X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary ion mass spectrometry. XPS studies have concentrated on a comparison of the valence band structure, the X-ray excited Auger peaks, and the characteristic loss region of the carbon l s photoelectron peak. AES work has involved a study of the structure of the C KVV Auger peak. Microtwinning and grain structure in the diamond films has been studied by TEM. In EELS the fine structure at the carbon K-edge has been studied to give information on the form of carbon bonding. Reflection electron diffraction has been used to determine the interplanar spacings of the films. The interface formed between the diamond and the silicon substrate has been studied by electron beam induced conductivity (EBIC) in the SEM. The film morphology has also been studied in the SEM.
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