Abstract
As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements are better defined than in Core-Loss. Furthermore, the analysis of the bulk plasmon peak, which is present in this energy range, also provides information about the composition. In this work, compositional information in an InAs-GaAs-GaSb heterostructure has been obtained from Low-Loss EEL spectra.
Highlights
Self-assembled InAs(Sb)GaAs quantum dots (QDs) heterostructures have received much attention since they are able to emit at 1.3-1.55 μm even at room temperature [1,2]
Previous Scanning-Transmission Electron Microscopy (STEM) studies of InAs QDs grown by Molecular Beam Epitaxy (MBE) over a GaAs (001) substrate suggest the formation of the InxGa1-xAsySb1-y alloy when a GaSb layer is directly grown on the QDs [5]
Low-Loss Energy Loss Spectroscopy (EELS) is a suitable method for the analysis of these systems since in this energy range (0-60 eV), the edges corresponding to these elements are better defined
Summary
Self-assembled InAs(Sb)GaAs quantum dots (QDs) heterostructures have received much attention since they are able to emit at 1.3-1.55 μm even at room temperature [1,2]. Low-Loss EELS is a suitable method for the analysis of these systems since in this energy range (0-60 eV), the edges corresponding to these elements are better defined. The bulk plasmon peak is present in this range, providing additional information about compositional distribution and strain of the heterostructures [6].
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