Abstract
Carbon nitride films were grown electrochemically through the application of a bias voltage to Si substrates immersed in acrylonitrile liquid. Continuous and uniform films were grown by the application of both negative and positive bias voltages. X-ray photoelectron spectra (XPS) of the grown films were studied to clarify their composition and bonding configurations. The XPS spectra show the presence of C, N, and O atoms as major components in the grown films. The atomic ratios of nitrogen to carbon in the films are estimated as 0.16–0.28, which are comparable to those in amorphous carbon nitride (a-CNx) films grown by conventional vapor deposition techniques. The analysis of C 1s and N 1s spectra reveals that the major bonding states of the grown films are attributed to a mixture of C≡N and hydrogenated C=N bonds.
Published Version
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