Abstract
Series of isochronal high-temperature (1000-1225 o C annealing experiments followed by quenching have been performed on GaAs crystals doped with oxygen. The defect concentrations and atomic structures have been monitored by localized vibrational mode (LVM) spectroscopy. Besides well-known isolated interstitial oxygen and a complex of oxygen interstitial and arsenic vacancy, three additional centers have been observed. Based on their annealing behavior and analysis of the LVM fine structure, these additional defects have been interpreted as complexes of interstitial oxygen and thermally generated divacancies
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