Completely merged multi-color asymmetric pyramid with suppressed stress and defect density

Abstract

The selective area growth (SAG) technique enables the creation of multi-color micro-structures. However, the substrate pattern to obtain multi-color and mass transfer of these micro-structures are complicated to achieve. Moreover, high dislocation density as well as large residual stress in c-plane quantum wells still remain challenges. Here, an improved SAG strategy was proposed to achieve completely merged asymmetric pyramids on closely connected deep-concave holes via the lateral overgrowth of adjacent pyramids. These asymmetric pyramids were directly grown on the sapphire substrate, making mass transfer be possible. Growth rate distinction appears at the different positions of the overgrowth region, resulting in a multi-wavelength emission. More importantly, the residual stress and the dislocation density can be suppressed by utilizing the deep-hole pattern and lateral overgrowth, contributing to a lower piezoelectric polarization field and a higher spontaneous emission rate. These ultrafast and high-efficient multi-color micro-LEDs are suitable for the application in high-resolution display, flexible devices, and high-speed visible-light-communication.