Complementary inverter from patterned source electrode vertical organic field effect transistors

Abstract

We report N-type and P-type high performance vertical organic field effect transistors. Insulation layer on top of the source electrode is used to reduce off currents leading to on/off ratio above 105 with on current density higher than 10 mA/cm2. A complementary inverter circuit was assembled from the transistors; examination of the inverter output characteristic indicates that the inverter gain is strong enough to be cascaded.