Abstract
ABSTRACTTwo different types of ferroelectric/semiconductor heterostructures, made up of Pb(Zr,Ti)O3/ZnO and BiFeO3/ZnO respectively, were fabricated on Pt(111)/Ti/SiO2/Si(100) by sol-gel process. Obvious diodelike behavior were observed in BiFeO3/ZnO heterostructures when current-voltage characteristics were measured, while Pb(Zr,Ti)O3/ZnO heterostructures exhibited a symmetrical behavior. It is found that Pb(Zr,Ti)O3/ZnO heterostructures showed a large polarization and the remnant polarization was approximately 15μC/cm2. The remnant polarization performed a modulation on the channel resistance. The different properties of two heterostructures might lead to different applications.
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