Abstract
Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (VT). The channel insulator was composed of two materials, SiO2 and HfO2. To improve the accuracy of the simulation, the interfacial trap parameter of SiO2 and HfO2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less VT shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the VDD and channel doping.
Highlights
The effects of the total ionizing dose (TID) on electronic devices are critical issues in various fields such as space and nuclear applications
To reduce the radiation effects on the electronic components, three radiation hardening methods have been widely considered: radiation hardening by process (RHBP), radiation hardening by shielding (RHBS), and radiation hardening by design (RHBD) [1,2,3,4]
We found that the 5ch-nanowire FET (NW) gate all around (GAA) devices exhibited less ionizing radiation sensitivity when compared to the FinFET device
Summary
The effects of the total ionizing dose (TID) on electronic devices are critical issues in various fields such as space and nuclear applications. The international thermonuclear experimental reactor (ITER) studies the TID effect for the development of a precise remote control system [5]. Electronic equipment operating in a radiation environment is subject to radiations that lead to defects in transistors. The TID effects, single event effects (SEEs), and displacement damage (DD) can lead to disturbances in the reliable operation of semiconductor devices due to radiation [6,7,8,9,10]. In the TID effect, the trapped holes in the oxide of transistor in the electron hole pairs (EHP) are caused by radiation and change in the threshold voltage (VT ) [11]
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