Abstract

Titanium oxide films have been deposited on Si (100) wafer and low temperature isotropic carbon (LTI-carbon), the prevailing used material for fabrication of mechanical heart valve, by ion beam enhanced deposition (IBED). The structure of the prepared films is studied by X-ray diffraction (XRD), glancing angle X-ray diffraction (GAXRD) and transmission electron microscopy (TEM). The results show that ‘substrate/amorphous interlayer/titanium oxide’ layered structure was formed on both substrates. The predominant phase in the film deposited on silicon is rutile TiO 2 with a highly (100) preferred orientation. However, when the film is deposited on LTI-carbon substrate at the same process condition, the major phase is Ti 2O 3 with random orientation. The structure difference between the films deposited on Si (100) and LTI-carbon is due to the formed phase rather than the substrate structure.

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