Abstract
The buildup of interface states in MOS structures with differently annealed oxides is studied under vacuum ultraviolet (VUV) and /sup 60/Co irradiation. A larger creation of interface states is observed if photoinjection of electrons is applied simultaneously with the VUV irradiation. The presence of electrons at the Si/SiO/sub 2/ interface favors the generation and explains the larger amount of interface states after /sup 60/Co irradiation. After VUV irradiation the interface state density increases in n-samples to a specific saturation value which is reached earlier if the gate voltage is made more positive or samples are exposed to photoinjection. This is due to the increase of the radiation peak which is located in the upper half of the silicon gap. The impact of post oxidation annealing on interface state generation is investigated due to VUV and /sup 60/Co irradiation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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