Abstract
The induced defects and interface states in MOS structures as a result of high temperature oxidation are investigated using a transient capacitance technique. Samples after dry oxidation at 1000 C were slowly cooled down to 700°C before pulling out. The densities of traps and interface states were shown to be two to five times lower for the slowly cooled samples than that for the fast cooled ones. The major bulk traps are at −0.26 and −0.49 eV, while the major interface state distribution resides at −0.6 eV. The carrier generation both in the bulk and at the interface is shown to be reduced on slow cooling. The results suggest that the interface states and the bulk traps are the consequence of quenched‐in impurities.
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