Abstract
Nano device prototyping (NDP) is essential for realizing and assessing ideas as well as theories in the form of nano devices, before they can be made available in or as commercial products. In this review, application results patterned similarly to those in the semiconductor industry (for cell phone, computer processors, or memory) will be presented. For NDP, some requirements are different: thus, other technologies are employed. Currently, in NDP, for many applications direct write Gaussian vector scan electron beam lithography (EBL) is used to define the required features in organic resists on this scale. We will take a look at many application results carried out by EBL, self-organized 3D epitaxy, atomic probe microscopy (scanning tunneling microscope/atomic force microscope), and in more detail ion beam techniques. For ion beam techniques, there is a special focus on those based upon liquid metal (alloy) ion sources, as recent developments have significantly increased their applicability for NDP.
Highlights
Nano device prototyping (NDP) is essential for realizing and assessing ideas as well as theories in the form of nano devices, before they can be made available in or as commercial products
There is a special focus on those based upon liquid metal ion sources, as recent developments have significantly increased their applicability for nano device prototyping (NDP)
Electron beam lithography is well suited for NDP, whereas optical lithography is widely used for semiconductor devices volume production41
Summary
A technology for lateral pattern definition in nano device prototyping (NDP) is Gaussian beam vector scan electron beam lithography (EBL) on organic resists. Here, at least a sample preparation process step to cover the sample surface with a resist is needed, initially. A technology for lateral pattern definition in nano device prototyping (NDP) is Gaussian beam vector scan electron beam lithography (EBL) on organic resists.. Electron beam lithography is well suited for NDP, whereas optical lithography is widely used for semiconductor devices volume production (for cell phone, computer processors, or memory). Both possess a long history (EBL, optical lithography43); there exists dedicated instrumentation. They are currently the most commonly used topdown lateral pattern definition techniques allowing feature sizes in the regime of interest in organic resists, for the respective applications. We will take a look at the history of EBL
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